to-220 -3l plastic-encapsulate mosfets cjp 08n65 n-channel power mosfet general description this advanced high voltage mosfet is designed to stand high energy in the avalanche mode an d switch efficiently. this new high energy device also offers a drain-to-source diode fast recovery time. desighed for high voltage, high speed switching applications such as power supp lies, converters, power motor controls and bridge circuits. feature ? high current rating ? lower r ds(on) ? lower capacitance ? lower total gate charge ? tighter v sd specifications ? avalanche energy specified maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds 650 gate-source voltage v gs 30 v continuous drain current i d 8 pulsed drain current i dm 32 a single pulsed avalanche energy (note1) e as 2 5 0 mj thermal resistance from junction to ambient r ja 62.5 /w operating and storage temperature range t j, t stg -55 ~+150 maximum lead temperature for soldering purposes , duration for 5 s econds t l 260 to-220 -3l 1. gate 2. drain 3. source 1 of 2 sales@zpsemi.com www.zpsemi.com cjp 08n65 a,aug,2013
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max unit off characteristics drain-source breakdown voltage v (br)dss v gs = 0v, i d =250a 650 drain-source diode forward voltage v sd v gs = 0v, i s =8a 1.4 v zero gate voltage drain current i dss v ds =650v, v gs =0v 10 a gate-body leakage current i gss v ds =0v, v gs = 30v 100 na on characteristics (note2) gate-threshold voltage v gs(th) v ds =v gs , i d =250a 2.0 4.0 v static drain-source on-resistance r ds(on) v gs = 1 0v, i d =4a 1.0 1.4 ? forward transconductance g fs v ds =50v, i d =3.9a 8.5 s dynamic characteristics (note 3) input capacitance c iss 1255 output capacitance c oss 135 reverse transfer capacitance c rss v ds =25v,v gs =0v,f =1mhz 16 pf switching characteristics (note 3) total gate charge q g 28 36 gate-source charge q gs 4.5 gate-drain charge q gd v ds =520v,v gs =10v,i d =8a 12 nc turn-on delay time t d (on) 45 turn-on rise time t r 130 turn-off delay time t d(off) 170 turn-off fall time t f v dd =325v, r g =25 ? , i d =8a 140 ns notes : 1. l=7mh, i l =8a, v dd =50v, r g =25 ? , starting t j =25 . 2. pulse test: pulse width 300s, duty cycle 2%. 3. these parameters have no way to verify. 2 of 2 sales@zpsemi.com www.zpsemi.com cjp 08n65 a,aug,2013
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